On the theory of the Wannier‐Mott excitons in disordered semiconductors

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Abstract
Two problems of the Wannier‐Mott exciton theory in disordered semiconductors are considered: a) limitation of the exciton life‐time due to the second kind collisions with the random field and b) influence of the excitonic effects upon the interband light absorption and emission. The first factor is shown to be of interest in some photoconductivity experiments while being relatively unimportant in interband optics. The role of the second factor depends upon the relation between the exciton binding energy and the characteristic energy of a charge carrier in a random field: the slope of an exponential optical tail depends upon which of the two energies is dominating.