Fast and Slow Quenching Defects in Germanium
- 1 January 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 25 (1) , 385-390
- https://doi.org/10.1109/tns.1978.4329336
Abstract
Fast quenching defects are observed in germanium samples from crystals grown in hydrogen atmospheres, but not if the hydrogen has been removed by out-diffusion or in material crystallized in a nitrogen atmosphere. The effective diffusion coefficient for hydrogen in Ge at 430°C was found to be 1.8 × 10-8cm2/sec. Energy levels and concentrations of slow quenching defects have been studied by Hall effect vs. T measurements as a function of annealing time at 430°C. In addition to the 0.08 eV acceptor commonly seen in dislocation-free samples, several other defects appear with energy levels closer to the valence band. The concentrations of all these defects increase initially and then disappear again with further annealing.Keywords
This publication has 6 references indexed in Scilit:
- Chemical Impurities and Lattice Defects in High-Purity GermaniumIEEE Transactions on Nuclear Science, 1974
- Encapsulation of High-Purity Germanium DetectorsIEEE Transactions on Nuclear Science, 1974
- High Purity Germanium for Detector FabricationIEEE Transactions on Nuclear Science, 1971
- Subthreshold Electron Damage in-Type GermaniumPhysical Review B, 1968
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- The diffusion of hydrogen in single-crystal germaniumJournal of Physics and Chemistry of Solids, 1960