Driving force for the electromigration of a substitutional impurity
- 15 June 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (12) , 5686-5689
- https://doi.org/10.1103/physrevb.15.5686
Abstract
Using the relation between the effective valence and the charge flux associated with a unit flux of a solute atom, we calculate the effective valence for the electromigration of a substitutional impurity. The formula for the force on an impurity near its stable position is compared with that obtained in previous calculations.Keywords
This publication has 11 references indexed in Scilit:
- Electrotransport of Interstitial H and D in V, Nb, and Ta as Experimental Evidence for the Direct Field ForcePhysical Review Letters, 1976
- Local-field and excitonic effects in the optical spectrum of a covalent crystalPhysical Review B, 1975
- Linear response theory of the driving forces for electromigrationThin Solid Films, 1975
- The force on a moving charge in an electron gasJournal of Physics C: Solid State Physics, 1973
- Electrotransport d'impuretes dans Cu et NiJournal of Physics and Chemistry of Solids, 1973
- A pseudopotential based theory of the driving forces for electromigration in metalsJournal of Physics and Chemistry of Solids, 1973
- Electromigration du cuivre de l'argent et de l'or dans l'aluminumSolid State Communications, 1973
- Calculation of the Force Acting on an Impurity in a Metal Submitted to an Electric Field or a Temperature GradientZeitschrift für Naturforschung A, 1971
- Sur l'electrolyse des alliages metalliquesJournal of Physics and Chemistry of Solids, 1962
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961