Real-space determination of atomic structure and bond relaxation at the-Si(111) interface
- 25 February 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 54 (8) , 827-830
- https://doi.org/10.1103/physrevlett.54.827
Abstract
The atomic structure at the interface of a 180° rotated single-crystal film on Si(111) has been determined by a new thin-film ion-channeling method, using ultrahigh depth resolution. The Ni atoms at the interface are found to be sevenfold coordinated. The bonds across the interface are slightly contracted.
Keywords
This publication has 5 references indexed in Scilit:
- The adsorption of Ag on the Si(111) 7×7 surface at room temperature studied by medium energy ion scattering, LEED and AESSurface Science, 1984
- Static and dynamic displacements of nickel atoms in clean and oxygen covered Ni(001) surfacesSurface Science, 1983
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Atomic structure of the NiSi2/(111)Si interfacePhilosophical Magazine A, 1982
- Interfacial order in epitaxial NiSi2Applied Physics Letters, 1980