Preparation and properties of nonstoichiometric MnAlGe thin films

Abstract
Films of MnAlGe which are nonstoichiometric have been prepared by rf sputtering. Structural, magnetic, and optical properties of these films have been determined. The Curie temperature of films with excess aluminum has been found to be as low as 190°C. The crystallographic orientation of these films may be adjusted by proper choice of substrate temperature.

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