Device Quality GaAs Grown at Low Temperature by the Halide Process

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Abstract
A study of the parameters which must be controlled to enable the vapor growth of at low temperature (LT.VPE) using the system has led to routine growth of MESFET layers at 630°C. The source temperature was determined from transport efficiency measurements and set in the range 670°–680°C. The growth rate dependence on temperatures and the mole fraction were determined. The morphology of the layer was optimized as a function of the mole fraction and the misorientation of the substrate. The best value of misorientation is about 6° off (001). These growth conditions were applied to submicron layer growth, and MESFET devices were fabricated. A comparison of the device performances obtained on layers deposited at high (750°C) and low (630°C) temperature shows an improvement on unbuffered layers grown at low temperature. Furthermore, the growth of an n− buffer layer at low temperature improves the noise figure still further. Typical results without buffer layers, at 10 GHz, are 4 dB NF, 7.5 dB associated gain, and 11 dB maximum gain.

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