Patterning of 0.1 μm polysilicon lines by using a negative electron beam resist
- 30 April 1990
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 11 (1-4) , 121-124
- https://doi.org/10.1016/0167-9317(90)90086-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A study of the effect of key processing variables on the lithographic performance of Microposit SAL601-ER7 resistJournal of Vacuum Science & Technology B, 1988
- Characterization of a high-resolution novolak based negative electron-beam resist with 4 μC/cm2 sensitivityJournal of Vacuum Science & Technology B, 1988
- The split-cross-bridge resistor for measuring the sheet resistance, linewidth, and line spacing of conducting layersIEEE Transactions on Electron Devices, 1986