SiGe micro-cooler
- 25 November 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (24) , 2146-2147
- https://doi.org/10.1049/el:19991435
Abstract
Thin film SiGe heterostructure coolers have been fabricated and characterised. Cooling by as much as 1.1 K at room temperature and 1.6 K at a substrate temperature of 70°C over a 3 µm Si/SiGe superlattice barrier has been measured. This corresponds to cooling power densities of hundreds of watts per square centimetre.Keywords
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