Low-field tunnelling current in thin-oxide m.n.o.s. memory transistors
- 25 January 1973
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 9 (2) , 19-21
- https://doi.org/10.1049/el:19730014
Abstract
An expression for the tunnelling current between the silicon bands and the traps located in the silicon nitride, in thin-oxide m.n.o.s. memory transistors under low-field conditions, is derived. The theoretical results are compared with available experimental data, and the parameters for the trap distribution are calculated. The agreement with experimental results is satisfactory.Keywords
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