Effect of adsorbates and insulating layers on the conductance of plasma deposited a-Si:H
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 575-580
- https://doi.org/10.1016/0022-3093(80)90656-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated siliconSolar Energy Materials, 1979
- Effect of adsorbed gases on the conductance of amorphous films of semiconducting silicon-hydrogen alloysApplied Physics Letters, 1978
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976
- Slow surface states and chemisorptionJournal of Physics and Chemistry of Solids, 1965
- On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperaturesPhysica, 1956