Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

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Abstract
The nucleation and growth of diamond crystals on single‐crystal copper surfaces implanted with carbon ions has been studied. Microwave plasma‐enhanced chemical vapor deposition was used for diamond growth. The single‐crystal copper substrates were implanted either at room temperature or at elevated temperature (∼820 °C) with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. From our study we construct a simple lattice model for diamond growth on graphite as 〈111〉diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈112̄0〉graphite.