The switching characteristics of sub-micron memory elements with synthetic anti-ferromagnetic (SAF) free-layers
- 23 March 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
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This publication has 2 references indexed in Scilit:
- Synthetic ferrimagnet free layer tunnel junction for magnetic random access memoriesJournal of Applied Physics, 2002
- Switching field behavior in antiparallely coupled sub-micrometer scale magnetic elementsJournal of Magnetism and Magnetic Materials, 2001