The EPR Fine Structure Spectrum of Dislocations in Silicon

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Abstract
The EPR fine structure spectrum of dislocations in plastically deformed silicon single crystals is measured using pure, boron, and phosphorus doped silicon. The EPR transitions of chains of coupled spins Si = 1/2 are calculated using the following spin Hamiltonian: The results reveal that the fine structure spectrum can be explained as caused by transitions taking place in chains of 2, 3, 4, and 5 coupled spins of unpaired electrons in the dislocation core. In heavily boron doped, plastically deformed crystals the EPR signal of boron atoms located in the stress field of the dislocations is found. The main axis of the stress field is nearly parallel to the Burgers vector of the primary glide system.

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