Low-temperature-processed (150–175 °C) Ge/Pd-based Ohmic contacts (ρc∼1×10−6 Ω cm2) to n-GaAs
- 24 July 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (4) , 509-511
- https://doi.org/10.1063/1.114552
Abstract
We have developed low resistance (ρc∼1×10−6 Ω cm2) Ge/Pd‐based (the Au/Ge/Pd and the Ag/Ge/Pd contacts) Ohmic contact schemes processed at temperatures 150–175 °C to n‐GaAs (n∼1×1018 cm−3). The Ohmic contact formation mechanism can be rationalized in terms of the solid phase regrowth (SPR) principle and the interdiffusion between Au (or Ag) and Ge.Keywords
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