Ion-implanted complementary MOS transistors in low-voltage circuits

1 January 1972

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 192-193
https://doi.org/10.1109/isscc.1972.1155118

Abstract

Ion-implanted complementary MOS integrated circuits which can operate at supply voltages less than 0.4 V have been fabricated. Their behavior will be described by a new theory of MOST characteristics which is valid near threshold.

Keywords

MOSFETS
THRESHOLD VOLTAGE
EQUATIONS
LOW VOLTAGE
INVERTERS
BORON
DIGITAL CIRCUITS
CMOS TECHNOLOGY
INTEGRATED CIRCUIT TECHNOLOGY
CMOS INTEGRATED CIRCUITS

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