Investigations on solid state reactions between tantalum thin films and oxidized silicon crystals
- 1 April 1983
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 1 (2) , 570-573
- https://doi.org/10.1116/1.571959
Abstract
Solid state reactions on Ta/SiO2/Si systems were investigated by Rutherford backscattering spectrometry (RBS) techniques and x-ray diffractometry analysis. It is found that a β-Ta2O5 layer is formed on the Ta/SiO2 interface with no silicide formation observed when samples are annealed at temperatures from 650 to 950 °C. The formation of tantalum silicides is possible at higher annealing temperatures. When samples are annealed at 1100 °C for 60 min, only the formation of the hexagonal Ta/SiO2 phase is observed.Keywords
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