Direct-coupled GaAs ring oscillators with self-aligned gates
- 1 November 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (11) , 325-326
- https://doi.org/10.1109/EDL.1982.25588
Abstract
The performance of direct-coupled GaAs MESFET ring oscillators having a 1µm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-µm gate technology.Keywords
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