Paramagnetic Resonance and Hall Coefficients in Fe-Doped n-Type GaP
- 1 May 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (5) , 2247-2250
- https://doi.org/10.1063/1.1661484
Abstract
Fe impurities in solution‐grown n‐type GaP crystals have been studied with the measurements of the paramagnetic resonance and the Hall coefficient at and above 77°K. It is shown that Fe impurities act as electron traps and when they have trapped electrons, reveal the paramagnetic resonance spectrum which the authors already reported as due to the (3d)7 configuration. It is confirmed that the resonance spectra appear only in n‐type GaP crystals by doping with various amounts of Fe and Te, Sn, or Zn. The trap level is found to be near the conduction band.This publication has 11 references indexed in Scilit:
- Photosensitive Spin Resonance of Oxygen Impurities in GaPJournal of the Physics Society Japan, 1970
- Recombination Kinetics in GaP Red-Emitting Diodes Determined by Photocurrent and Decay CharacteristicsJapanese Journal of Applied Physics, 1970
- Photosensitive Paramagnetic Resonance in Fe-Doped Gallium PhosphideJournal of the Physics Society Japan, 1969
- ESR-resonances in doped GaAs and GaPJournal of Physics and Chemistry of Solids, 1969
- Charge-Carrier Capture and Its Effect on Transition Capacitance in GaP–Cu DiodesJournal of Applied Physics, 1969
- Infrared Donor-Acceptor Pair Spectra Involving the Deep Oxygen Donor in Gallium PhosphidePhysical Review B, 1968
- Hall Measurements of Te-Doped Gallium Phosphide of Improved HomogeneityJournal of Applied Physics, 1968
- Electroluminescence from Ge-Doped GaP p—n JunctionsJournal of Applied Physics, 1968
- Paramagnetic-Resonance Studies of S, Se, and Te Donor Impurities in GaPPhysical Review B, 1967
- Electron Paramagnetic Resonance of Iron in Gallium ArsenidePhysical Review B, 1963