C-band 10 Watt MMIC amplifier manufactured using refractory SAG process
- 13 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A Ka-Band GaAs Power MMICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 2-W Ku-Band Monolithic GaAs FET AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Ka-band monolithic GaAs FET power amplifier modulesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- S-band eight watt power amplifier MMICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A K/Ka-band distributed power amplifier with capacitive drain couplingIEEE Transactions on Microwave Theory and Techniques, 1988
- A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICsIEEE Transactions on Electron Devices, 1988
- X-band monolithic GaAs push-pull amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979