Wet silylation and oxygen plasma development of photoresists: A mature and versatile lithographic process for microelectronics and microfabrication
- 1 September 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (5) , 3332-3338
- https://doi.org/10.1116/1.588532
Abstract
A near‐surface imaging process using wet silylation and oxygen plasma development is described. New characterization techniques of films spun on wafers are presented for: (a) quantitative Si concentration determination using proton nuclear magnetic resonance spectroscopy (H), and (b) glass transition and/or flow temperature determination (Tg) of the silylated photoresist using thermomechanical analysis. H‐line, I‐line, and deep ultraviolet lithography (at 248 nm) results are presented, while extension to 193 nm lithography is discussed. Very anisotropic and high aspect ratio pattern transfer to Si, with fluorine‐only containing plasmas is demonstrated. Possible applications are discussed.Keywords
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