Atomic-scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short-period superlattices
- 6 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (6) , 560-562
- https://doi.org/10.1063/1.103646
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Dispersive character of optical phonons in GaAlAs alloys from Raman scattering in superlatticesPhysical Review Letters, 1989
- Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructuresPhysical Review B, 1989
- Experimental probing of quantum-well eigenstatesPhysical Review Letters, 1989
- Chemical Mapping of Semiconductor Interfaces at Near-Atomic ResolutionPhysical Review Letters, 1989
- Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wellsPhysical Review B, 1988
- Characterization of interfacial atomic steps in GaAs/AlAs superlattices by transmission electron microscopyApplied Physics Letters, 1988
- The influence of interface disorder on the electronic structure of a quantum well: A theoretical studySuperlattices and Microstructures, 1986
- Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothingSurface Science, 1986
- Photoluminescence study of interface defects in high-quality GaAs-GaAlAs superlatticesJournal of Applied Physics, 1986
- Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxyApplied Physics Letters, 1985