High-speed InP/GaInAs photodiode on sapphire substrate

23 November 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (24) , 1653-1654
https://doi.org/10.1049/el:19891108

Abstract

Using epitaxial lift-off by selective wet-chemical etching, we have transferred an InP/GalnAs photodiode onto a sapphire substrate. The transferred diode shows an estimated 13.5 GHz bandwidth and 90% internal quantum efficiency. Our technique has promising applications in highperformance optoelectronic circuits for fibre-optic communications systems combining device from different material systems.

Keywords

INTERNAL QUANTUM EFFICIENCY
OPTOELECTRONIC CIRCUITS
13.5 GHZ
SELECTIVE WET-CHEMICAL ETCHING
MESA STRUCTURE
SAPPHIRE SUBSTRATE
PIN DIODE
EPITAXIAL LIFT-OFF
DETECTOR BANDWIDTH
PHOTODIODE
INP-GAINAS
FIBRE-OPTIC COMMUNICATIONS SYSTEMS
1.55 MICRON
90 PERCENT
HIGH SPEED DEVICE
1.3 MICRON
III-V SEMICONDUCTOR

This publication has 1 reference indexed in Scilit:

Grafted GaAs Detectors On Lithium Niobate And Glass Optical Waveguides
Published by SPIE-Intl Soc Optical Eng ,1989