Photochemical microetching of GaAs
- 27 October 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (22) , 919-920
- https://doi.org/10.1049/el:19830628
Abstract
Controlled etching of III-V compound semiconductors is an important step in the fabrication of discrete and integrated components. We have developed a system which allows a 1.3 μm diameter light spot to be obtained. Displacement of the spot on the sample and speed are controlled by a computer for any desired figure. The light spot is used to photochemically etch GaAs immersed in aqueous solutions.Keywords
This publication has 1 reference indexed in Scilit:
- Photochemical microetching of GaAsElectronics Letters, 1983