High-speed Ga _0.47 In _0.53 as photoconductive detector for picosecond light pulses

11 June 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (12) , 421-422
https://doi.org/10.1049/el:19810292

Abstract

A planar GaInAs photodetector suitable for the detection of light pulses in the picosecond range is presented. The device investigated exhibits a photocurrent rise time of ∼ 20 ps and an inner gain-bandwidth product of ΓB ∼ 125 GHz. At a wavelength of 820 nm the sensitivity is 3 A/W.

Keywords

PHOTOCURRENT RISE TIME
III-V SEMICONDUCTOR
SENSITIVITY
GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTOR
PICOSECOND LIGHT PULSES
INNER GAIN-BANDWIDTH PRODUCT

High-speed Ga 0.47 In 0.53 as photoconductive detector for picosecond light pulses

Abstract

Keywords

High-speed Ga _0.47 In _0.53 as photoconductive detector for picosecond light pulses