Experimental technique for determining surface potential as a function of gate voltage of a MOS capacitor
- 1 October 1980
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 51 (10) , 1378-1380
- https://doi.org/10.1063/1.1136079
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966