High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy

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Abstract
We report the chemical‐beam epitaxial (CBE) growth of InP/InGaAsP Bragg mirrors around 1.55 μm wavelength region. Mirrors with nearly 100% reflectivity and with more than 400 Å flat top region in the Bragg band have been achieved by using 45 pairs of InP (1348 Å) and InGaAsP (1216 Å, λ g =1.45 μm) quarter wavelength layers which have a total thickness of 11.5 μm. Excellent uniformity of the layer thickness and optical quality in both horizontal and vertical directions were obtained. This demonstrates the unique capability of CBE in maintaining uniform and reproducible growth of InP/InGaAsP during a long growth period.