Study of deep-level defects and annealing effects in undoped and Sn-doped GaAs solar cells irradiated by one-MeV electrons
- 30 September 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (9) , 835-840
- https://doi.org/10.1016/0038-1101(83)90053-9
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Deep-level defects, recombination mechanisms, and their correlation to the performance of low-energy proton-irradiated AlGaAs—GaAs solar cellsIEEE Transactions on Electron Devices, 1980
- Electrical Properties of Electron-Irradiated GaAsIEEE Transactions on Nuclear Science, 1972