Investigation of current transport and charges in graded base HBTs
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
An all injection model for graded-base HBTs (heterojunction bipolar transistors) has been developed and found to agree well with experimental results. The model shows that assuming low injection level and base transit time current independence may not be valid in all cases. Recombination current components have been formulated. The base grading effect on current components and current gain is investigated. The results show that as Al mole fraction increases gain increases to a maximum, then decreases Author(s) Ryum, B.R. Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA Abdel-Motaleb, I.M.Keywords
This publication has 9 references indexed in Scilit:
- Effect of recombination current on current gain of HBTsIEE Proceedings G Circuits, Devices and Systems, 1991
- A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs)Solid-State Electronics, 1990
- Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector regionIEEE Electron Device Letters, 1988
- Two-dimensional analysis of the surface recombination effect on current gain for GaAlAs/GaAs HBTsIEEE Transactions on Electron Devices, 1988
- An Ebers-Moll model for the heterostructure bipolar transistorSolid-State Electronics, 1986
- New formulation of the current and charge relations in bipolar transistor modeling for CACD purposesIEEE Transactions on Electron Devices, 1985
- A p n p AlGaAs/GaAs heterojunction bipolar transistorApplied Physics Letters, 1985
- Electrical current in solids with position-dependent band structureSolid-State Electronics, 1978
- Auger recombination in heavily doped p-type GaAsSolid State Communications, 1969