Reliable InGaAs quantum well lasers at 1.1 μm
- 28 March 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (7) , 552-554
- https://doi.org/10.1049/el:19910348
Abstract
Strained-layer InGaAs quantum well lasers operating CW at 1.1 μm have been life tested to over 18 000 h, exhibiting a degradation rate of 0.45Ga0.55As quantum well.Keywords
This publication has 1 reference indexed in Scilit:
- Chapter 6 Defects in III–V Compound SemiconductorsPublished by Elsevier ,1985