The reverse laser drilling of transparent materials

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Abstract
Within a limited range of incident laser‐beam intensities, laser drilling of a sapphire wafer initiates on the surface of the wafer where the laser beam exits and proceeds upstream in the laser beam to the surface where the laser beam enters the wafer. This reverse laser drilling is the result of the constructive interference between the laser beam and its reflected component on the exit face of the wafer. Constructive interference occurs only at the exit face of the sapphire wafer because the internally reflected laser beam suffers no phase change there. A model describing reverse laser drilling predicts the ranges of incident laser‐beam intensity where no drilling, reverse laser drilling, and forward laser drilling can be expected in various materials. The application of reverse laser drilling in fabricating feed‐through conductors in silicon‐on‐sapphire wafers for a massively parallel processor is described.