GaAs, InP, and CdSe photovoltage transients
- 1 October 1977
- journal article
- Published by Elsevier in Surface Science
- Vol. 67 (1) , 226-236
- https://doi.org/10.1016/0039-6028(77)90380-6
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Determination of surface state parameters from surface photovoltage transientsSurface Science, 1977
- GaP photovoltage transientsPhysical Review B, 1977
- Photovoltage studies of n-type InP (100)Surface Science, 1976
- Photovoltage studies of clean and oxygen covered gallium arsenideSurface Science, 1976
- Surface photovoltage and electron energy‐loss spectroscopy of oxygen adsorbed on (112̄0) CdSeJournal of Vacuum Science and Technology, 1976
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- Investigation of surface recombination on epitaxial GaAs filmsPhysica Status Solidi (a), 1973
- Electronic characteristics of “real” CdS surfacesSurface Science, 1972
- The effect of adsorbed oxygen on the surface photo voltage of CdSeSurface Science, 1970