Diffusion of arsenic in polycrystalline silicon

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Abstract
The diffusion of arsenic in polycrystalline silicon films has been studied over the temperature range 750–950 °C and for grain sizes 210–510 nm. Rutherford backscattering spectrometry was used to measure the concentration profiles of arsenic, initially introduced into the polysilicon by ion implantation, after various annealing steps. The concentration profiles were found to be determined by a combination of two factors—the low diffusivity in the bulk of the rains and the much higher diffusivity in the grain boundaries. The diffusivity of arsenic in the grain boundaries was independent of concentration, with an activation energy of 3.9 eV, very close to that of the low‐concentration arsenic diffusivity in single‐crystal silicon. However, the value of the diffusivity was 8.6×104 exp(−3.9/kT)cm2/s, four orders of magnitude higher than the single‐crystal value. The diffusivity in the interior of the grains was the same as that in single‐crystal silicon.

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