Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs
- 25 July 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 230 (3-4) , 579-583
- https://doi.org/10.1016/s0022-0248(01)01300-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studiesJournal of Applied Physics, 2000
- Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructuresJournal of Applied Physics, 2000
- Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructuresJournal of Applied Physics, 1999
- Results, Potential and Challenges of High Power GaN-Based TransistorsPhysica Status Solidi (a), 1999
- Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistorsApplied Physics Letters, 1997