Current-induced precessional magnetization reversal

We report magnetization reversal in microscopic current-in-plane spin valves by ultrashort current pulses through the device. Current densities of the order of ${10}^{11}\hspace{0.17em}{\mathrm{A/m}}^2$ with pulse durations as short as 120 ps reliably and reversibly switch the cell’s free-layer magnetization. Variations of the pulse parameters reveal the full signature of precessional switching, which is triggered by the transverse magnetic field generated by the device current. This current switching mode allows for the design of a two-terminal nonvolatile magnetic memory cell combining ultrafast access times and high magnetoresistive readout.