MOS characterization of thermally oxided 6H silicon carbide

• 1 January 1993
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 40  (11) , 2130-2131
• https://doi.org/10.1109/16.239812

Abstract

Keywords

• CARRIER LIFETIME
• METAL-INSULATOR-SEMICONDUCTOR DEVICES
• OXIDATION
• SEMICONDUCTOR MATERIALS
• SEMICONDUCTOR-INSULATOR BOUNDARIES
• SILICON COMPOUNDS
• 260 TO 370 DEGC
• C-V CURVE
• MOS CAPACITORS
• MOS EVALUATION
• SIO2/SIC INTERFACE
• SIO2-SIC
• BULK GENERATION LIFETIME
• CAPACITANCE TRANSIENT
• DRY AMBIENTS
• MODIFIED ZERBST TECHNIQUE
• OXIDATION CONDITIONS
• SUBSTRATE DOPING
• SURFACE GENERATION VELOCITY
• WET AMBIENTS