Structure of interfaces in a-Si:H/a-SiNx:H superlattices
- 15 January 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (2) , 778-785
- https://doi.org/10.1063/1.347364
Abstract
We present experimental results on the atomic structure of the interfaces between a-Si:H and a-SiNx:H layers obtained by analyzing the intensity of the Raman lines from zone-folded acoustic phonons and of the peaks of x-ray diffraction at grazing angles. We determine the width of these interfaces and their stability under thermal annealing in temperatures below the crystallization temperature.This publication has 19 references indexed in Scilit:
- Frequency gaps for acoustic phonons ina-Si:H/a-:H superlatticesPhysical Review B, 1987
- Phonon stop bands in amorphous superlatticesPhysical Review B, 1987
- Observation of folded-zone acoustical phonons by Raman scattering in amorphous Si-superlatticesPhysical Review B, 1986
- Raman scattering study of amorphous Si-Ge interfacesPhysical Review B, 1985
- Interdiffusion in Si/Ge amorphous multilayer filmsApplied Physics Letters, 1985
- Folded acoustic and quantized optic phonons in (GaAl)As superlatticesPhysical Review B, 1985
- Growth and structure of layered amorphous semiconductorsJournal of Non-Crystalline Solids, 1984
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983
- Observation of Folded Acoustic Phonons in a Semiconductor SuperlatticePhysical Review Letters, 1980
- Selective Transmission of High-Frequency Phonons by a Superlattice: The "Dielectric" Phonon FilterPhysical Review Letters, 1979