GaAs/LB film MISS switching device
- 27 September 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (20) , 838-839
- https://doi.org/10.1049/el:19840569
Abstract
MISS switches incorporating Langmuir-Blodgett films as insulating layers are reported for the first time. Devices fabricated using n on p+ GaAs and including a 9 nm-thick ω-tricosenoic acid insulating layer are shown to possess good characteristics. The results indicate that switching occurs due to a ‘punch-through’ mechanism.Keywords
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