High resolution focussed ion beam implantation with post objective lens retarding and acceleration
- 31 January 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 23 (1-4) , 119-122
- https://doi.org/10.1016/0167-9317(94)90118-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Focused ion beam lithographyNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Investigation of Random and Channeling Ar+Implantation-Induced Damage in Al(In)GaAs/GaAs Quantum WellsJapanese Journal of Applied Physics, 1992
- 30 nm resolution zero proximity lithography on high-Z substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Focused-ion-beam repair of phase-shift photomasksPublished by SPIE-Intl Soc Optical Eng ,1992
- A focused ion beam system with a retarding mode objective lensJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical propertiesPhysical Review B, 1988