Ohmic contacts on n-GaAs produced by laser alloying of Ge films

14 February 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (4) , 113-114
https://doi.org/10.1049/el:19800084

Abstract

A Q-switched Nd:y.a.g. laser has been used to form ohmic contacts on n-type GaAs covered with an evaporated film of Ge. The contacts showed good surface morphology with contact resistivities as low as 10⁻⁶ Ω cm².

Keywords

N-GAAS
Q-SWITCHED ND:YAG LASER
CONTACT RESISTIVITY 10-6 OHM CM2
SURFACE MORPHOLOGY
LASER ALLOYING
OHMIC CONTACTS
GE FILMS

This publication has 1 reference indexed in Scilit:

Introduction to Semiconductor Heterojunctions
Published by Elsevier ,1972