High-efficiency operation of AlGaAs/GaAs power heterojunction bipolar transistors at low collector supply voltage
- 27 May 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (11) , 982-984
- https://doi.org/10.1049/el:19930654
Abstract
High-fmax (> 160 GHz) AlGaAs/GaAs heterojunction bipolar transistors are developed using power-oriented layer structures and a selfalignment fabrication technology characterised by a base–metal overlaid structure. The fabricated power transistors tested at 2.6 GHz yield maximum power-added efficiencies of 69 and 60% at low supply voltages of 3 and 1.5 V, respectively.Keywords
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- 5 W monolithic HBT amplifier for broadband X-band applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002