Characteristics of nMOS/GAA (Gate-All-Around) transistors near threshold
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1) , 815-818
- https://doi.org/10.1016/0167-9317(92)90551-2
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Silicon-on-insulator 'gate-all-around device'Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistorsIEEE Electron Device Letters, 1991