Synchrotron Plane Wave X-Ray Topography of GaAs with a Separate (+, +) Monochro-Collimator
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12A) , L968-971
- https://doi.org/10.1143/jjap.24.l968
Abstract
A plane wave X-ray topographic camera was constructed with a separate (+, +) monochro-collimator system at Photon Factory. Undoped and indium-doped GaAs crystals are topographically investigated. For the undoped GaAs, a two-fold symmetric strain field has been observed in a (001) wafer. In the indium-doped sample, a highly stressed region probably produced by the In segregation has been observed.Keywords
This publication has 9 references indexed in Scilit:
- N2 Laser System for Laser Microbeam Cell SurgeryJapanese Journal of Applied Physics, 1985
- Experimental and Theoretical Studies on X-ray Plane Wave Images of a Dislocation in the Laue CaseZeitschrift für Naturforschung A, 1982
- Synchrotron-radiation plane-wave topography I. Application to misfit dislocation imaging in III-V heterojunctionsPhilosophical Magazine A, 1980
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Determination of the Burgers vector of a dislocation from equal-thickness fringes observed with a plane wave of X-raysJournal of Applied Crystallography, 1976
- Contrast in the dislocation images for the Bragg casePhysica Status Solidi (a), 1976
- A Multiple Crystal System for High Strain-Sensitivity X-Ray Topography and Its ApplicationsJapanese Journal of Applied Physics, 1975
- Use of Asymmetric Dynamical Diffraction of X-rays for Multiple-Crystal Arrangements of the (n1, +n2)SettingZeitschrift für Naturforschung A, 1973
- Measurements on Local Variations in Spacing and Orientation of the Lattice Plane of Silicon Single Crystals by X-Ray Double-Crystal TopographyJapanese Journal of Applied Physics, 1966