Measurement of donor density by pulsing Schottky-barrier diodes
- 28 June 1968
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 4 (13) , 259-260
- https://doi.org/10.1049/el:19680198
Abstract
On applying a voltage pulse, which varies as the square of the time, to a Schottky-barrier diode the current flowing to store the charge is shown to have a close relation to the donor density. This gives an immediate and rapid assessment of the donor density with depth in a semiconductor.Keywords
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