Electron cyclotron resonance ion stream etching with high uniformity and accuracy for metal–oxide–semiconductor gate fabrication
- 1 November 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (6) , 3347-3350
- https://doi.org/10.1116/1.587510
Abstract
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