Invited: Preparation and Properties of GaAs Devices by Molecular Beam Epitaxy

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Abstract
A review of the recent development of molecular beam epitaxy (MBE) is presented. Various devices ranging from microwave to optoelectronics have been prepared with MBE. Low noise FET's with a noise figure of 1.9 dB at 6 GHz and with a corresponding gain of 11 dB have been achieved. The power FET's with 3 mm gate-width gave 1 dB compression power of 1.3 W at 4.4 GHz. The double hetero-structure laser with 1000 µm cavity length has a threshold current as low as 1.7×103 A/cm2. Stripe geometry lasers operated cw at a temperature as high as 100°C. Successful integration of a laser to a low loss waveguide with a tapered coupler was accomplished monolithically. Recent development of the monolayer growth is also discussed.

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