Photoconductor and electrode requirements for thin film ferroelectric/photoconductor memory device

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Abstract
Photoconductive films enabling a proposed ferroelectric/photoconductor storage system to fully meet the performance goals must have a gain ≈ 10, carrier life time ≥ 2 nsec, response time ≤ 10 μsee, and breakdown field strength in excess of 2 × 105 V/cm. To sustain the necessary voltages in the dark, the photoconductor film should have blocking contacts. CdSe films of 0.4 to 0.7 μm thickness meeting the above-mentioned requirements have been fabricated, suggesting that it is possible to attain device performance as required.