InGaAs/InP p-i-n photodiodes grown by chemical beam epitaxy

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Abstract
Two types of mesa‐type InGaAs/InP p‐i‐n photodiodes have been fabricated from wafers grown by chemical beam epitaxy (CBE): (1) a conventional diffused InGaAs homojunction and (2) a novel InP/InGaAs/InP double heterojunction. Both types of devices have exhibited very low dark current, good quantum efficiency of 70% (without antireflection coatings), and transit‐time‐limited pulse response. The lowest dark currents, less than 1 nA at −10 V bias, have been achieved with the double heterojunction devices in spite of the fact that the p‐n junction is coincident with a heterojunction interface. This attests to the excellent quality of heterojunction interfaces grown by CBE. These results also unequivocally established that CBE is capable of producing high quality multilayer heterostructures for state‐of‐the‐art device applications.