Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates
- 29 March 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (13) , 1536-1538
- https://doi.org/10.1063/1.108632
Abstract
The atomic structure of misfit dislocations at In0.2Ga0.8As/GaAs interfaces misoriented 2°–10° from (001) has been investigated by high‐resolution electron microscopy. The misfit dislocations are predominantly dissociated 60° dislocations consisting of 90° and 30° Shockley partial dislocations and enclosed stacking faults. These dissociated 60° dislocations form increasingly asymmetrically on the different {111} glide planes as the misorientation increases. The 90° partial dislocations are not confined to the interface, but lie 0–100 Å beneath it. The 30° partial dislocations, in turn, are pushed even further into the substrate.Keywords
This publication has 5 references indexed in Scilit:
- Coherent stress relaxation in a half space: Modulated layers, inclusions, steps, and a general solutionJournal of Applied Physics, 1991
- Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructuresPhysical Review B, 1989
- Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayersJournal of Applied Physics, 1988
- Influence of annealing and substrate orientation on metalorganic chemical vapor deposition GaAs on silicon heteroepitaxyJournal of Applied Physics, 1988
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986