Barrier heights and silicide formation for Ni, Pd, and Pt on silicon
- 15 September 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 24 (6) , 3354-3359
- https://doi.org/10.1103/physrevb.24.3354
Abstract
Deposited Ni, Pd, and Pt films on -type Si have been annealed up to 700°C. Silicide formation was monitored by MeV Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward characteristics. The values of the barrier heights are 0.66 eV for Si and NiSi, 0.75 eV for Si; 0.85 eV for Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase.
Keywords
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