Hot-electron aging in p-channel MOSFET's for VLSI CMOS
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (12) , 1896-1898
- https://doi.org/10.1109/t-ed.1984.21807
Abstract
Hot-electron effects were investigated via direct measurements of gate currents in both n-channel and p-channel devices for 1-µm CMOS structures. Results reveal substantial gate currents in p-channel transistors biased into saturation, implying that the P-MOS device may also pose a significant reliability hazard in a modern CMOS structure.Keywords
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